DZT2222A-13
- Mfr.Part #
- DZT2222A-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A SOT223-3
- Stock
- 2,079
- In Stock :
- 2,079
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn Off Time-Max (toff) :
- 285ns
- Base Part Number :
- DZT2222A
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Pin Count :
- 4
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 40V
- Package / Case :
- TO-261-4, TO-261AA
- Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 19 Weeks
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 40V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Width :
- 3.5mm
- Max Collector Current :
- 600mA
- Pbfree Code :
- yes
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 4
- Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 1V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.6mm
- Mounting Type :
- Surface Mount
- Published :
- 2007
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 75V
- Transistor Element Material :
- SILICON
- Length :
- 6.5mm
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Continuous Collector Current :
- 600mA
- Max Power Dissipation :
- 1W
- Radiation Hardening :
- No
- hFE Min :
- 35
- Datasheets
- DZT2222A-13

NPN -55°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DZT2222A-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 600mA for high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.This device can take an input voltage of 40V volts before it breaks down.A maximum collector current of 600mA volts can be achieved.
DZT2222A-13 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DZT2222A-13 Applications
There are a lot of Diodes Incorporated
DZT2222A-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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