DXT458P5-13
- Mfr.Part #
- DXT458P5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS NPN 400V 0.3A POWERDI5
- Stock
- 72,933
- In Stock :
- 72,933
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Height :
- 1.15mm
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 2.8W
- Collector Emitter Breakdown Voltage :
- 400V
- Manufacturer Package Identifier :
- POWERDI-5
- Supplier Device Package :
- PowerDI™ 5
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Continuous Collector Current :
- 300mA
- Max Collector Current :
- 300mA
- Power Dissipation :
- 2.8W
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- PowerDI™ 5
- Collector Base Voltage (VCBO) :
- 400V
- Polarity :
- NPN
- Max Breakdown Voltage :
- 400V
- Frequency - Transition :
- 50MHz
- Weight :
- 95.991485mg
- Power - Max :
- 2.8W
- Published :
- 2016
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Saturation Voltage :
- 500mV
- Current - Collector (Ic) (Max) :
- 300mA
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Max Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Base Part Number :
- DXT458
- Mounting Type :
- Surface Mount
- Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Length :
- 4.05mm
- Max Operating Temperature :
- 150°C
- Width :
- 5.45mm
- Voltage - Collector Emitter Breakdown (Max) :
- 400V
- Datasheets
- DXT458P5-13

NPN -55°C~150°C TJ 100nA 1 Elements PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXT458P5-13 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 400V volts is the breakdown voltage.Supplier device package PowerDI™ 5 comes with the product.The device exhibits a collector-emitter breakdown at 400V.Maximum collector currents can be below 300mA volts.
DXT458P5-13 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the supplier device package of PowerDI™ 5
DXT458P5-13 Applications
There are a lot of Diodes Incorporated
DXT458P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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