DXT458P5-13

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Mfr.Part #
DXT458P5-13
Manufacturer
Diodes Incorporated
Package / Case
PowerDI™ 5
Datasheet
Download
Description
TRANS NPN 400V 0.3A POWERDI5
Stock
72,933
In Stock :
72,933

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Min Operating Temperature :
-55°C
Number of Pins :
3
Current - Collector Cutoff (Max) :
100nA
Emitter Base Voltage (VEBO) :
5V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 6mA, 50mA
Height :
1.15mm
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
2.8W
Collector Emitter Breakdown Voltage :
400V
Manufacturer Package Identifier :
POWERDI-5
Supplier Device Package :
PowerDI™ 5
Mount :
Surface Mount
Gain Bandwidth Product :
50MHz
Transistor Type :
NPN
Continuous Collector Current :
300mA
Max Collector Current :
300mA
Power Dissipation :
2.8W
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
PowerDI™ 5
Collector Base Voltage (VCBO) :
400V
Polarity :
NPN
Max Breakdown Voltage :
400V
Frequency - Transition :
50MHz
Weight :
95.991485mg
Power - Max :
2.8W
Published :
2016
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
400V
Collector Emitter Saturation Voltage :
500mV
Current - Collector (Ic) (Max) :
300mA
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Factory Lead Time :
15 Weeks
Max Frequency :
50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Base Part Number :
DXT458
Mounting Type :
Surface Mount
Frequency :
50MHz
REACH SVHC :
No SVHC
Length :
4.05mm
Max Operating Temperature :
150°C
Width :
5.45mm
Voltage - Collector Emitter Breakdown (Max) :
400V
Datasheets
DXT458P5-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DXT458P5-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerDI™ 5, Base Part Number:DXT458, Mounting Type:Surface Mount, DXT458P5-13 pinout, DXT458P5-13 datasheet PDF, DXT458P5-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DXT458P5-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DXT458P5-13


NPN -55°C~150°C TJ 100nA 1 Elements PowerDI™ 5 Tape & Reel (TR) Surface Mount

DXT458P5-13 Overview


In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 6mA, 50mA.Maintaining the continuous collector voltage at 300mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 400V volts is the breakdown voltage.Supplier device package PowerDI™ 5 comes with the product.The device exhibits a collector-emitter breakdown at 400V.Maximum collector currents can be below 300mA volts.

DXT458P5-13 Features


the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the supplier device package of PowerDI™ 5


DXT458P5-13 Applications


There are a lot of Diodes Incorporated
DXT458P5-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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