DXT3904-13
- Mfr.Part #
- DXT3904-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.2A SOT89-3
- Stock
- 1,656
- In Stock :
- 1,656
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 40V
- Gain Bandwidth Product :
- 300MHz
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transition Frequency :
- 300MHz
- REACH SVHC :
- No SVHC
- Turn Off Time-Max (toff) :
- 250ns
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Frequency :
- 300MHz
- Width :
- 2.48mm
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Package / Case :
- TO-243AA
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 70ns
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 1V
- Published :
- 2007
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 300mV
- Length :
- 4.5mm
- Weight :
- 51.993025mg
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.5mm
- Factory Lead Time :
- 19 Weeks
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Flat
- Max Collector Current :
- 200mA
- Max Breakdown Voltage :
- 40V
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Datasheets
- DXT3904-13

NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
DXT3904-13 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 10mA 1V DC current gain.As it features a collector emitter saturation voltage of 300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 200mA volts.
DXT3904-13 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
DXT3904-13 Applications
There are a lot of Diodes Incorporated
DXT3904-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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