DST847BPDP6-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Factory Lead Time :

15 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN, PNP

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Package / Case :

SOT-963

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-5V

Max Power Dissipation :

250mW

Collector Emitter Saturation Voltage :

-500mV

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

45V

Radiation Hardening :

No

Number of Elements :

2

Terminal Form :

Flat

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

175MHz

Max Collector Current :

100mA

Number of Pins :

6

Frequency - Transition :

175MHz 340MHz

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA

Pbfree Code :

yes

Max Breakdown Voltage :

45V

Mount :

Surface Mount

Gain Bandwidth Product :

340MHz

Operating Temperature :

-55°C~150°C TJ

Continuous Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

45V

Mounting Type :

Surface Mount

Number of Terminations :

6

Base Part Number :

DST847BPD

Collector Base Voltage (VCBO) :

50V

Terminal Finish :

Matte Tin (Sn)

Pin Count :

6

Element Configuration :

Dual