DSS8110Y-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Gain Bandwidth Product :

100MHz

Factory Lead Time :

15 Weeks

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

1A

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

120V

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Voltage (VCEO) :

100V

Pbfree Code :

yes

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

100V

Package / Case :

6-TSSOP, SC-88, SOT-363

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 10V

Pin Count :

6

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

6

Max Power Dissipation :

625mW

hFE Min :

80

Transistor Application :

SWITCHING

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Number of Pins :

6

Element Configuration :

Single

REACH SVHC :

No SVHC

Max Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

200mV

Published :

2010

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

1A

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

Transition Frequency :

100MHz

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON