DSS8110Y-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Transition Frequency :

100MHz

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

6

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

100V

Terminal Finish :

Matte Tin (Sn)

Max Collector Current :

1A

Number of Terminations :

6

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

625mW

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 10V

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

100V

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100mA, 1A

Pin Count :

6

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Elements :

1

Collector Emitter Saturation Voltage :

200mV

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

hFE Min :

80

RoHS Status :

ROHS3 Compliant

Published :

2010

Transistor Application :

SWITCHING

Continuous Collector Current :

1A

Collector Emitter Breakdown Voltage :

100V

ECCN Code :

EAR99

Transistor Type :

NPN

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Collector Base Voltage (VCBO) :

120V

Mount :

Surface Mount