DSL12AW-7

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Mfr.Part #
DSL12AW-7
Manufacturer
Diodes Incorporated
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS PNP 12V 2A SOT363
Stock
50
In Stock :
50

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA
Published :
2016
Transistor Application :
SWITCHING
Weight :
6.010099mg
Factory Lead Time :
6 Weeks
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
REACH SVHC :
No SVHC
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
290mV
Vce Saturation (Max) @ Ib, Ic :
290mV @ 20mA, 1A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gain Bandwidth Product :
180MHz
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
-12V
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Emitter Base Voltage (VEBO) :
-5V
Number of Pins :
6
Transistor Element Material :
SILICON
Package / Case :
6-TSSOP, SC-88, SOT-363
Max Breakdown Voltage :
12V
Max Power Dissipation :
450mW
Transistor Type :
PNP
Lead Free :
Lead Free
Terminal Finish :
Matte Tin (Sn)
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Pin Count :
6
Number of Terminations :
6
Collector Emitter Saturation Voltage :
-290mV
Time@Peak Reflow Temperature-Max (s) :
40
Max Collector Current :
2A
Number of Elements :
1
Collector Emitter Breakdown Voltage :
12V
Transition Frequency :
180MHz
Continuous Collector Current :
-2A
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 800mA 1.5 V
Power - Max :
450mW
Datasheets
DSL12AW-7
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DSL12AW-7 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Package / Case:6-TSSOP, SC-88, SOT-363, Number of Terminations:6, Mounting Type:Surface Mount, DSL12AW-7 pinout, DSL12AW-7 datasheet PDF, DSL12AW-7 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DSL12AW-7 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DSL12AW-7


PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount

DSL12AW-7 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 800mA 1.5 V.With a collector emitter saturation voltage of -290mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 290mV @ 20mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at -2A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 12V volts that it can take.Collector current can be as low as 2A volts at its maximum.

DSL12AW-7 Features


the DC current gain for this device is 100 @ 800mA 1.5 V
a collector emitter saturation voltage of -290mV
the vce saturation(Max) is 290mV @ 20mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 180MHz


DSL12AW-7 Applications


There are a lot of Diodes Incorporated
DSL12AW-7 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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