DSC7102R0L
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- Mfr.Part #
- DSC7102R0L
- Manufacturer
- Panasonic
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A MINIP3
- Stock
- 2,375
- In Stock ：
- 2,375
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Frequency - Transition :
- 180MHz
- hFE Min :
- 120
- Published :
- 2010
- Element Configuration :
- Single
- Height :
- 1.5mm
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Max Frequency :
- 180MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Width :
- 2.5mm
- Terminal Form :
- Flat
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- DSC7102
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Collector Current :
- 1A
- Package / Case :
- TO-243AA
- Factory Lead Time :
- 10 Weeks
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 180MHz
- Length :
- 4.5mm
- Polarity/Channel Type :
- NPN
- Datasheets
- DSC7102R0L
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
DSC7102R0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
DSC7102R0L Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
DSC7102R0L Applications
There are a lot of Panasonic Electronic Components
DSC7102R0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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