DSC7102R0L
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- Mfr.Part #
- DSC7102R0L
- Manufacturer
- Panasonic
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A MINIP3
- Stock
- 2,375
- In Stock ：
- 2,375
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 180MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transition Frequency :
- 180MHz
- RoHS Status :
- RoHS Compliant
- Width :
- 2.5mm
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-243AA
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1A
- Terminal Form :
- Flat
- Factory Lead Time :
- 10 Weeks
- Base Part Number :
- DSC7102
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- hFE Min :
- 120
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Max Frequency :
- 180MHz
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.5mm
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 4.5mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Collector Emitter Saturation Voltage :
- 300mV
- Published :
- 2010
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- DSC7102R0L
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
DSC7102R0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
DSC7102R0L Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
DSC7102R0L Applications
There are a lot of Panasonic Electronic Components
DSC7102R0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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