DSA7102R0L
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- Mfr.Part #
- DSA7102R0L
- Manufacturer
- Panasonic
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A MINIP3
- Stock
- 28,867
- In Stock ：
- 28,867
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- Manufacturer :
- Panasonic
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 2V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Width :
- 2.5mm
- Transition Frequency :
- 150MHz
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 150MHz
- Factory Lead Time :
- 10 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- -300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-243AA
- Max Collector Current :
- 1A
- Published :
- 2010
- Operating Temperature :
- 150°C TJ
- Max Frequency :
- 150MHz
- Base Part Number :
- DSA7102
- Collector Base Voltage (VCBO) :
- -80V
- Max Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 300mV
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Height :
- 1.5mm
- Transistor Type :
- PNP
- Terminal Form :
- Flat
- Length :
- 4.5mm
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- -5V
- Datasheets
- DSA7102R0L
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
DSA7102R0L Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
DSA7102R0L Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 150MHz
DSA7102R0L Applications
There are a lot of Panasonic Electronic Components
DSA7102R0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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