DP350T05-7
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- Mfr.Part #
- DP350T05-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 12,596
- In Stock ：
- 12,596
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Additional Feature :
- High Reliability
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- PNP
- Current Rating :
- -500mA
- Published :
- 1997
- hFE Min :
- 20
- Terminal Form :
- Gull wing
- Height :
- 1mm
- Voltage - Rated DC :
- -350V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Base Part Number :
- DP350T05
- Length :
- 3.05mm
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -1V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 300mW
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Number of Pins :
- 3
- Frequency :
- 50MHz
- Max Power Dissipation :
- 300mW
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 350V
- Gain Bandwidth Product :
- 50MHz
- Weight :
- 7.994566mg
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 350V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Termination :
- SMD/SMT
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- 350V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Collector Emitter Voltage (VCEO) :
- 350V
- Datasheets
- DP350T05-7
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
DP350T05-7 Overview
DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.
DP350T05-7 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
DP350T05-7 Applications
There are a lot of Diodes Incorporated
DP350T05-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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