DP350T05-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

hFE Min :

20

Max Collector Current :

500mA

Base Part Number :

DP350T05

Package / Case :

TO-236-3, SC-59, SOT-23-3

Weight :

7.994566mg

Collector Emitter Breakdown Voltage :

350V

Collector Emitter Saturation Voltage :

-1V

Collector Emitter Voltage (VCEO) :

350V

Emitter Base Voltage (VEBO) :

-5V

Pin Count :

3

Transition Frequency :

50MHz

Gain Bandwidth Product :

50MHz

Power Dissipation :

300mW

Max Power Dissipation :

300mW

Width :

1.4mm

Packaging :

Tape and Reel (TR)

Current Rating :

-500mA

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

15 Weeks

Termination :

SMD/SMT

Pbfree Code :

yes

Voltage - Rated DC :

-350V

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

50nA ICBO

Polarity/Channel Type :

PNP

Frequency :

50MHz

Length :

3.05mm

Lead Free :

Lead Free

Height :

1mm

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

350V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Radiation Hardening :

No

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Mount :

Surface Mount

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Transistor Type :

PNP

Max Breakdown Voltage :

350V

Published :

1997