DNBT8105-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

60V

Max Collector Current :

1A

Number of Elements :

1

Power Dissipation :

300mW

Height :

1mm

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

DNBT8105

Voltage - Rated DC :

60V

Number of Terminations :

3

Element Configuration :

Single

Polarity/Channel Type :

NPN

Additional Feature :

High Reliability

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Width :

1.3mm

Collector Base Voltage (VCBO) :

80V

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 5V

Published :

2008

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

60V

Weight :

7.994566mg

Frequency :

150MHz

Terminal Position :

Dual

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Surface Mount

Max Breakdown Voltage :

60V

Factory Lead Time :

15 Weeks

Current Rating :

1A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

100nA

Transistor Application :

SWITCHING

Length :

2.9mm

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

600mW

Contact Plating :

Tin

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Gain Bandwidth Product :

150MHz

Pin Count :

3

Collector Emitter Saturation Voltage :

500mV

Lead Free :

Lead Free

Number of Pins :

3

hFE Min :

30

Transition Frequency :

150MHz

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount