DMTH4007LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

15.5A

Power Dissipation-Max :

2.7W Ta 150W Tc

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Number of Elements :

1

Reference Standard :

AEC-Q101

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

20 mJ

Factory Lead Time :

22 Weeks

Number of Pins :

8

Continuous Drain Current (ID) :

100A

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

29.1nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

15.5A Ta 100A Tc

Number of Terminations :

5

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

40V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1895pF @ 30V