DMS2220LFW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

780μm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.9A

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-VDFN Exposed Pad

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

1.5W Ta

JESD-609 Code :

e4

ECCN Code :

EAR99

Number of Terminations :

8

Published :

2012

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

12V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

-20V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mounting Type :

Surface Mount

Number of Channels :

1

Element Configuration :

Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Length :

3mm

Packaging :

Tape and Reel (TR)

Number of Elements :

1

FET Feature :

Schottky Diode (Isolated)

Terminal Position :

Dual

Vgs (Max) :

±12V

Rds On (Max) @ Id, Vgs :

95m Ω @ 2.8A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Drain-source On Resistance-Max :

0.095Ohm

Weight :

37.393021mg

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 10V

Width :

2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Mount :

Surface Mount

Additional Feature :

High Reliability

Pin Count :

8