DMS2120LFWB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

2.9A

Pbfree Code :

yes

JESD-609 Code :

e4

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Package / Case :

8-VDFN Exposed Pad

Width :

2mm

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain-source On Resistance-Max :

0.095Ohm

Height :

780μm

Number of Pins :

8

Drain to Source Breakdown Voltage :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Mount :

Surface Mount

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

FET Feature :

Schottky Diode (Isolated)

Terminal Position :

Dual

Number of Elements :

1

Number of Terminations :

8

Power Dissipation-Max :

1.5W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2012

Number of Channels :

1

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

95m Ω @ 2.8A, 4.5V

Length :

3mm

Weight :

37.393021mg