DMS2120LFWB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mount :

Surface Mount

Pbfree Code :

yes

Terminal Position :

Dual

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

95m Ω @ 2.8A, 4.5V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Package / Case :

8-VDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

2.9A Ta

FET Feature :

Schottky Diode (Isolated)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

JESD-609 Code :

e4

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Terminations :

8

Drain-source On Resistance-Max :

0.095Ohm

FET Type :

P-Channel

Published :

2012

Gate to Source Voltage (Vgs) :

12V

Power Dissipation-Max :

1.5W Ta

ECCN Code :

EAR99

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Length :

3mm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Height :

780μm

Continuous Drain Current (ID) :

2.9A

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Width :

2mm

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 10V

Number of Pins :

8

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Weight :

37.393021mg

Drain to Source Breakdown Voltage :

-20V