DMP6350S-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

206pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

350m Ω @ 900mA, 10V

Drain to Source Breakdown Voltage :

-60V

Power Dissipation :

720mW

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

3.6 ns

Published :

2016

Height :

1.1mm

Series :

Automotive, AEC-Q101

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

-1.5A

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.35Ohm

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

JESD-30 Code :

R-PDSO-G3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 10V

Number of Terminations :

3

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Turn-Off Delay Time :

12.3 ns

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

720mW Ta

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE