DMP6110SSSQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

110m Ω @ 4.5A, 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Factory Lead Time :

23 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

15.4 mJ

Terminal Form :

Gull wing

FET Type :

P-Channel

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

19A

Drain-source On Resistance-Max :

0.11Ohm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1030pF @ 30V

Power Dissipation-Max :

1.5W Ta

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

ECCN Code :

EAR99

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

19.4nC @ 10V

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant