DMP4025LSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Mount :

Surface Mount

Mounting Type :

Surface Mount

Fall Time (Typ) :

30.9 ns

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Weight :

73.992255mg

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Number of Terminations :

8

Drain-source On Resistance-Max :

0.045Ohm

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Threshold Voltage :

-1.3V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 20V

Published :

2013

Turn On Delay Time :

6.9 ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

6.9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.95mm

Turn-Off Delay Time :

53.7 ns

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

1.8V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.5mm

Rise Time :

14.7ns

Pbfree Code :

yes

Base Part Number :

DMP4025LSD

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

25m Ω @ 3A, 10V

Width :

3.95mm

Continuous Drain Current (ID) :

-7.6A

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Logic Level Gate

Power Dissipation :

1.8W

Max Power Dissipation :

1.8W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

33.7nC @ 10V

Drain to Source Breakdown Voltage :

-40V