DMP32D9UFZ-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

22.5pF @ 15V

Power Dissipation-Max :

390mW Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

200mA

Mount :

Surface Mount

Vgs (Max) :

±10V

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 10V

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

200mA Ta

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

15 Weeks

Turn-Off Delay Time :

19.9 ns

Gate to Source Voltage (Vgs) :

10V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

10.5 ns

Drain Current-Max (Abs) (ID) :

0.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

5Ohm

Rise Time :

2.3ns

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Package / Case :

3-XFDFN

Number of Terminations :

3

Turn On Delay Time :

3.1 ns

Number of Pins :

3

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-30V

Rds On (Max) @ Id, Vgs :

5 Ω @ 100mA, 4.5V

Terminal Form :

NO LEAD

Published :

2014

JESD-609 Code :

e4

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 4.5V

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Channels :

1