DMP3105LVT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2011

Power Dissipation-Max :

1.15W Ta

Turn On Delay Time :

9.7 ns

Number of Pins :

6

Additional Feature :

High Reliability

Radiation Hardening :

No

Rise Time :

17.7ns

Transistor Application :

SWITCHING

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

75m Ω @ 4.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Length :

2.9mm

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

DS Breakdown Voltage-Min :

30V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Resistance :

75mOhm

Current - Continuous Drain (Id) @ 25°C :

3.1A Ta

Fall Time (Typ) :

64 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Height :

900μm

Width :

1.6mm

Number of Terminations :

6

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

839pF @ 15V

Turn-Off Delay Time :

269 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Channels :

1

Factory Lead Time :

15 Weeks

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Mount :

Surface Mount

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Power Dissipation :

1.75W

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

19.8nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±12V

Pbfree Code :

yes

Continuous Drain Current (ID) :

3.9A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6