DMP3099LQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101

Vgs (Max) :

±20V

Power Dissipation-Max :

1.08W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3

Drain Current-Max (Abs) (ID) :

3.8A

Configuration :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.8A, 10V

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G3

Turn On Time-Max (ton) :

9.8ns

Drain-source On Resistance-Max :

99Ohm

Input Capacitance (Ciss) (Max) @ Vds :

563pF @ 25V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

11A

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Additional Feature :

High Reliability

Number of Elements :

1

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

10.2 mJ

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Factory Lead Time :

23 Weeks

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Turn Off Time-Max (toff) :

46ns

Packaging :

Tape and Reel (TR)