DMP3056L-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4.9 ns

Power Dissipation-Max :

1.38W Ta

Drain to Source Voltage (Vdss) :

30V

Continuous Drain Current (ID) :

-4.3A

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

20A

Height :

1.1mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

25V

Terminal Form :

Gull wing

Number of Elements :

1

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

642pF @ 25V

Number of Terminations :

3

Transistor Application :

SWITCHING

Factory Lead Time :

23 Weeks

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

1.38W

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

50m Ω @ 6A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.05Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Published :

2016

Turn-Off Delay Time :

35.2 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-30V

JESD-609 Code :

e3

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.8nC @ 10V

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Mount :

Surface Mount