DMP3035SFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

8

JESD-30 Code :

S-PDSO-N5

Radiation Hardening :

No

Terminal Position :

Dual

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

20m Ω @ 8A, 10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1633pF @ 15V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

25.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Continuous Drain Current (ID) :

8.5A

Rise Time :

14ns

Vgs (Max) :

±25V

Turn On Delay Time :

8.5 ns

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

7A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta

Operating Mode :

ENHANCEMENT MODE

Weight :

72.007789mg

Drain-source On Resistance-Max :

0.02Ohm

Turn-Off Delay Time :

50 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Power Dissipation-Max :

950mW Ta

Gate to Source Voltage (Vgs) :

25V

Factory Lead Time :

15 Weeks

Number of Channels :

1