DMP3035LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

40A

Drain to Source Breakdown Voltage :

-30V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

7 Weeks

Power Dissipation-Max :

2W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Channels :

1

Number of Terminations :

8

Transistor Application :

SWITCHING

Number of Pins :

8

Terminal Position :

Dual

Turn On Delay Time :

5.1 ns

ECCN Code :

EAR99

Length :

5.3mm

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Width :

4.1mm

Rise Time :

8ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

11A

Pin Count :

8

Terminal Form :

Gull wing

Pbfree Code :

yes

Height :

1.5mm

JESD-609 Code :

e3

Fall Time (Typ) :

30 ns

Radiation Hardening :

No

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 20V

Weight :

850.995985mg

Gate Charge (Qg) (Max) @ Vgs :

30.7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1655pF @ 20V

Lead Free :

Lead Free

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

16m Ω @ 8A, 10V

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

46 ns

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

High Reliability