DMP3026SFDE-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 10V

Vgs (Max) :

±25V

JESD-30 Code :

S-PDSO-N3

Power Dissipation-Max :

2W Ta

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

8.7A

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Surface Mount :

yes

Additional Feature :

High Reliability

Reference Standard :

AEC-Q101

Drain-source On Resistance-Max :

0.019Ohm

Current - Continuous Drain (Id) @ 25°C :

10.4A Ta

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

19m Ω @ 4.5A, 10V

Factory Lead Time :

17 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

3

Terminal Form :

NO LEAD

ECCN Code :

EAR99

Package / Case :

6-UDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

JESD-609 Code :

e4

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

1204pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE