DMP3020LSS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

5.3mm

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

40A

Weight :

850.995985mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Pin Count :

8

Element Configuration :

Single

Radiation Hardening :

No

Turn On Delay Time :

5.1 ns

Width :

4.1mm

Additional Feature :

High Reliability

Rise Time :

8ns

Input Capacitance (Ciss) (Max) @ Vds :

1802pF @ 15V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30.7nC @ 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power Dissipation-Max :

2.5W Ta

Number of Channels :

1

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Power Dissipation :

2.5W

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Height :

1.5mm

Continuous Drain Current (ID) :

12A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

46 ns

Rds On (Max) @ Id, Vgs :

14m Ω @ 8A, 10V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

Fall Time (Typ) :

30 ns

JESD-609 Code :

e3

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Factory Lead Time :

16 Weeks

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

-30V

REACH SVHC :

No SVHC