DMP3012LPS-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Package / Case :

8-PowerTDFN

Published :

2014

Number of Terminations :

5

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.1V @ 250μA

ECCN Code :

EAR99

Additional Feature :

High Reliability

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F5

Continuous Drain Current (ID) :

13.2A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

13.2A Ta

Mount :

Surface Mount

Mounting Type :

Surface Mount

Capacitance :

6.807nF

Turn-Off Delay Time :

254 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6807pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

FET Type :

P-Channel

Vgs (Max) :

±20V

Number of Channels :

1

Number of Elements :

1

Fall Time (Typ) :

95 ns

Number of Pins :

8

Turn On Delay Time :

8.9 ns

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Rise Time :

10.5ns

Power Dissipation-Max :

1.29W Ta

Rds On (Max) @ Id, Vgs :

9m Ω @ 10A, 10V

Weight :

95.991485mg

DS Breakdown Voltage-Min :

30V