DMNH6021SPD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain-source On Resistance-Max :

0.025Ohm

Gate Charge (Qg) (Max) @ Vgs :

20.1nC @ 10V

Additional Feature :

High Reliability

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Terminations :

6

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

64 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Input Capacitance (Ciss) (Max) @ Vds :

1143pF @ 25V

Number of Pins :

8

Series :

Automotive, AEC-Q101

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual)

Drain to Source Voltage (Vdss) :

60V

Max Power Dissipation :

1.5W

Terminal Form :

Flat

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

25m Ω @ 15A, 10V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Number of Elements :

2

Factory Lead Time :

17 Weeks

Operating Temperature :

-55°C~175°C TJ

Published :

2016

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

32A

Current - Continuous Drain (Id) @ 25°C :

8.2A 32A

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PDSO-F6

FET Feature :

Standard

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE