DMMT5551-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

6V

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Collector Base Voltage (VCBO) :

180V

Gain Bandwidth Product :

300MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6

Voltage - Rated DC :

180V

Number of Terminations :

6

Lead Free :

Lead Free

Length :

3mm

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Factory Lead Time :

19 Weeks

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Current Rating :

200mA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

50nA ICBO

Width :

1.6mm

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Max Collector Current :

200mA

Height :

1.1mm

Transistor Element Material :

SILICON

Weight :

29.993795mg

Collector Emitter Saturation Voltage :

200mV

Polarity :

NPN

Transistor Type :

2 NPN (Dual) Matched Pair

Base Part Number :

DMMT5551

RoHS Status :

ROHS3 Compliant

Published :

2007

Pin Count :

6

Number of Pins :

6

Power Dissipation :

300mW

hFE Min :

80

Transistor Application :

SWITCHING

Frequency :

300MHz

JESD-609 Code :

e3

Element Configuration :

Dual

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Max Breakdown Voltage :

160V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Collector Emitter Voltage (VCEO) :

160V

Collector Emitter Breakdown Voltage :

160V