DMMT5551-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

160V

Lead Free :

Lead Free

Max Collector Current :

200mA

Package / Case :

SOT-23-6

Factory Lead Time :

19 Weeks

Max Breakdown Voltage :

160V

Transistor Application :

SWITCHING

Height :

1.1mm

Base Part Number :

DMMT5551

Element Configuration :

Dual

JESD-609 Code :

e3

Length :

3mm

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

160V

Current Rating :

200mA

Emitter Base Voltage (VEBO) :

6V

Collector Base Voltage (VCBO) :

180V

Gain Bandwidth Product :

300MHz

Width :

1.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Type :

2 NPN (Dual) Matched Pair

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Published :

2007

REACH SVHC :

No SVHC

Transition Frequency :

100MHz

Voltage - Rated DC :

180V

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2

Mount :

Surface Mount

Weight :

29.993795mg

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

50nA ICBO

Collector Emitter Saturation Voltage :

200mV

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Frequency :

300MHz

Polarity :

NPN

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Pin Count :

6

hFE Min :

80

Terminal Form :

Gull wing

Max Power Dissipation :

300mW