DMMT5401-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

150V

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

235

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Voltage - Rated DC :

-150V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Current Rating :

-200mA

ECCN Code :

EAR99

Element Configuration :

Dual

Transition Frequency :

100MHz

Max Breakdown Voltage :

150V

JESD-30 Code :

R-PDSO-G6

Max Collector Current :

200mA

Collector Emitter Voltage (VCEO) :

500mV

Transistor Element Material :

SILICON

Number of Elements :

2

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

-5V

Gain Bandwidth Product :

300MHz

Length :

3mm

Terminal Finish :

TIN LEAD

Polarity :

PNP

Base Part Number :

DMMT5401

Power - Max :

300mW

Current - Collector Cutoff (Max) :

50nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 10mA 5V

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Packaging :

Tape and Reel (TR)

Weight :

29.993795mg

Transistor Type :

2 PNP (Dual) Matched Pair

Collector Base Voltage (VCBO) :

160V

hFE Min :

50

Number of Terminations :

6

Mount :

Surface Mount

Published :

2007

Height :

1.1mm

Time@Peak Reflow Temperature-Max (s) :

10

Width :

1.6mm

Continuous Collector Current :

-200mA

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

Lead Free :

Contains Lead

Pin Count :

6

Package / Case :

SOT-23-6

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Form :

Gull wing