DMG9933USD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

22.19 ns

Number of Pins :

8

FET Type :

2 P-Channel (Dual)

Additional Feature :

High Reliability

Turn-Off Delay Time :

46.52 ns

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Max Power Dissipation :

1.15W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Factory Lead Time :

15 Weeks

Continuous Drain Current (ID) :

4.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rise Time :

10.29ns

Turn On Delay Time :

12.45 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Terminal Form :

Gull wing

Weight :

73.992255mg

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Number of Channels :

2

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

REACH SVHC :

No SVHC

Number of Elements :

2

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

6.5nC @ 4.5V

Rds On (Max) @ Id, Vgs :

75m Ω @ 4.8A, 4.5V

Gate to Source Voltage (Vgs) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

608.4pF @ 6V

Drain-source On Resistance-Max :

0.075Ohm

Pin Count :

8

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

-20V