DMG204010R

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

300mW

Number of Terminations :

6

Emitter Base Voltage (VEBO) :

7V

Height :

1.1mm

Power - Max :

300mW

Current - Collector Cutoff (Max) :

100μA

Contact Plating :

Tin

Mounting Type :

Surface Mount

Width :

1.5mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA

Max Breakdown Voltage :

50V

Polarity :

NPN, PNP

REACH SVHC :

Unknown

Transistor Type :

NPN, PNP

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

HTS Code :

8541.21.00.75

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Number of Elements :

2

Gain Bandwidth Product :

150MHz

RoHS Status :

RoHS Compliant

Max Collector Current :

100mA

Operating Temperature :

150°C TJ

hFE Min :

210

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

60V

Terminal Form :

Gull wing

Transition Frequency :

150MHz

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

210 @ 2mA 10V

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

DMG20401

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Length :

2.9mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Package / Case :

SOT-23-6

ECCN Code :

EAR99