DMC6040SSD-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Number of Terminations :

8

Rise Time :

6.3ns

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.1A

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.24W

Current - Continuous Drain (Id) @ 25°C :

5.1A 3.1A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Breakdown Voltage :

-60V

Drain-source On Resistance-Max :

0.04Ohm

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Reference Standard :

AEC-Q101

Drain Current-Max (Abs) (ID) :

5.1A

Factory Lead Time :

23 Weeks

Turn On Delay Time :

3.7 ns

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Number of Pins :

8

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 15V

Transistor Element Material :

SILICON

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

Fall Time (Typ) :

26.1 ns

Turn-Off Delay Time :

58.7 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

260

FET Type :

N and P-Channel

Published :

2014

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

40m Ω @ 8A, 10V

Weight :

73.992255mg

Gate Charge (Qg) (Max) @ Vgs :

20.8nC @ 10V

Number of Elements :

2