DMC4050SSDQ-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Terminal Position :

Dual

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Additional Feature :

High Reliability

Terminal Finish :

Matte Tin (Sn)

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

37.56nC @ 10V

Drain-source On Resistance-Max :

0.06Ohm

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

1790.8pF @ 20V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Max Power Dissipation :

1.8W

Factory Lead Time :

15 Weeks

Published :

2016

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

45m Ω @ 3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Series :

Automotive, AEC-Q101

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

4.2A

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power - Max :

1.8W

FET Type :

N and P-Channel Complementary

Number of Pins :

8

Transistor Element Material :

SILICON

Number of Terminations :

8

Continuous Drain Current (ID) :

5.3A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING