DMC2450UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

N and P-Channel

Drain Current-Max (Abs) (ID) :

0.74A

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-F6

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

480m Ω @ 200mA, 5V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

FET Feature :

Standard

Max Power Dissipation :

450mW

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

900mV @ 250μA

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

16 Weeks

Number of Terminations :

6

Terminal Position :

Dual

Mount :

Surface Mount

DS Breakdown Voltage-Min :

20V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

JESD-609 Code :

e3

Additional Feature :

High Reliability

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

1.03A 700mA

Input Capacitance (Ciss) (Max) @ Vds :

37.1pF @ 10V

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.7Ohm

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Terminal Form :

Flat

Number of Elements :

2

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1.03A

ECCN Code :

EAR99

Published :

2015

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666