DMB2227A-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Collector Current :

600mA

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

60V

Terminal Form :

Gull wing

Package / Case :

SOT-23-6

Transition Frequency :

300MHz

Collector Base Voltage (VCBO) :

75V

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Pbfree Code :

yes

Frequency - Transition :

300MHz 200MHz

Gain Bandwidth Product :

300MHz

Frequency :

300MHz

Length :

3mm

Transistor Type :

NPN, PNP

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

5V

hFE Min :

35

Collector Emitter Voltage (VCEO) :

1V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Width :

1.6mm

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Current - Collector Cutoff (Max) :

10nA ICBO

Mount :

Surface Mount

Height :

1.1mm

Weight :

29.993795mg

Published :

2005

Max Power Dissipation :

300mW

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

REACH SVHC :

No SVHC

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

Number of Pins :

6

Radiation Hardening :

No

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Element Configuration :

Dual

Transistor Application :

SWITCHING

Polarity :

NPN, PNP