DMB2227A-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Weight :

29.993795mg

Height :

1.1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

Max Power Dissipation :

300mW

Transistor Element Material :

SILICON

Radiation Hardening :

No

Frequency :

300MHz

Transition Frequency :

300MHz

Operating Temperature :

-55°C~150°C TJ

Width :

1.6mm

Max Collector Current :

600mA

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Gain Bandwidth Product :

300MHz

Number of Elements :

2

Current - Collector Cutoff (Max) :

10nA ICBO

Collector Emitter Voltage (VCEO) :

1V

Polarity :

NPN, PNP

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

60V

Terminal Finish :

Matte Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

40V 60V

Power Dissipation :

300mW

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN, PNP

Collector Base Voltage (VCBO) :

75V

Length :

3mm

Number of Pins :

6

hFE Min :

35

Emitter Base Voltage (VEBO) :

5V

Pin Count :

6

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

300MHz 200MHz

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Transistor Application :

SWITCHING

Max Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2005

Mount :

Surface Mount

Pbfree Code :

yes

Package / Case :

SOT-23-6

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA