DIT100N10

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

PCB changed :

3

Pin Count :

3

Configuration :

Single

Typical Gate Charge @ Vgs (nC) :

85@10V

Mounting :

Through Hole

Maximum Continuous Drain Current (A) :

100

PPAP :

No

Maximum Gate Source Voltage (V) :

±20

SVHC :

yes

Maximum Power Dissipation (mW) :

200000

Maximum Drain Source Voltage (V) :

100

Maximum Gate Threshold Voltage (V) :

4

Maximum Drain Source Resistance (mOhm) :

13@10V

Maximum Gate Source Leakage Current (nA) :

100

Number of Elements per Chip :

1

Typical Turn-On Delay Time (ns) :

15

Category :

Power MOSFET

Tab :

Tab

Package Height :

8.7

Package Width :

4.5

Package Length :

10.1

Maximum IDSS (uA) :

1

Packaging :

Tube

Typical Input Capacitance @ Vds (pF) :

4800@50V

Maximum Operating Temperature (°C) :

175

ECCN (US) :

EAR99

Channel Mode :

Enhancement

Typical Rise Time (ns) :

50

Typical Turn-Off Delay Time (ns) :

40

Typical Gate Charge @ 10V (nC) :

85

Supplier Temperature Grade :

COMMERCIAL

Minimum Operating Temperature (°C) :

-55

Supplier Package :

TO-220AB

Automotive :

No

Typical Fall Time (ns) :

55

Channel Type :

N

HTS :

8541.29.00.95

EU RoHS :

Compliant with Exemption