DIT100N10
- Mfr.Part #
- DIT100N10
- Manufacturer
- Diotec Semiconductor
- Package / Case
- Datasheet
- Download
- Description
- MOSFET, TO-220AB, 100V, 100A, N,
- Stock
- 16,371
- In Stock :
- 16,371
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package Height :
- 8.7
- ECCN (US) :
- EAR99
- Typical Turn-Off Delay Time (ns) :
- 40
- Maximum IDSS (uA) :
- 1
- Channel Type :
- N
- Automotive :
- No
- Package Length :
- 10.1
- Supplier Package :
- TO-220AB
- Tab :
- Tab
- Packaging :
- Tube
- Maximum Operating Temperature (°C) :
- 175
- Maximum Drain Source Voltage (V) :
- 100
- Mounting :
- Through Hole
- Number of Elements per Chip :
- 1
- Configuration :
- Single
- PCB changed :
- 3
- Typical Rise Time (ns) :
- 50
- Maximum Gate Source Voltage (V) :
- ±20
- Package Width :
- 4.5
- Minimum Operating Temperature (°C) :
- -55
- Typical Gate Charge @ 10V (nC) :
- 85
- Maximum Continuous Drain Current (A) :
- 100
- Pin Count :
- 3
- EU RoHS :
- Compliant with Exemption
- Typical Gate Charge @ Vgs (nC) :
- 85@10V
- Typical Fall Time (ns) :
- 55
- Supplier Temperature Grade :
- COMMERCIAL
- Channel Mode :
- Enhancement
- Maximum Power Dissipation (mW) :
- 200000
- HTS :
- 8541.29.00.95
- SVHC :
- yes
- Category :
- Power MOSFET
- Typical Input Capacitance @ Vds (pF) :
- 4800@50V
- Typical Turn-On Delay Time (ns) :
- 15
- Maximum Gate Threshold Voltage (V) :
- 4
- Maximum Gate Source Leakage Current (nA) :
- 100
- Maximum Drain Source Resistance (mOhm) :
- 13@10V
- PPAP :
- No
- Datasheets
- DIT100N10

DIT100N10 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
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