DIT100N10

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Power Dissipation (mW) :

200000

Package Height :

8.7

Maximum Operating Temperature (°C) :

175

ECCN (US) :

EAR99

Typical Turn-Off Delay Time (ns) :

40

Configuration :

Single

Typical Gate Charge @ 10V (nC) :

85

EU RoHS :

Compliant with Exemption

SVHC :

yes

Channel Mode :

Enhancement

Typical Gate Charge @ Vgs (nC) :

85@10V

Supplier Package :

TO-220AB

Maximum Gate Source Leakage Current (nA) :

100

Package Length :

10.1

PPAP :

No

Category :

Power MOSFET

Pin Count :

3

Typical Input Capacitance @ Vds (pF) :

4800@50V

Maximum Drain Source Resistance (mOhm) :

13@10V

HTS :

8541.29.00.95

Maximum Continuous Drain Current (A) :

100

Package Width :

4.5

Minimum Operating Temperature (°C) :

-55

Maximum Gate Source Voltage (V) :

±20

Typical Turn-On Delay Time (ns) :

15

Mounting :

Through Hole

Automotive :

No

Packaging :

Tube

Supplier Temperature Grade :

COMMERCIAL

Typical Fall Time (ns) :

55

Typical Rise Time (ns) :

50

Tab :

Tab

Maximum Drain Source Voltage (V) :

100

Number of Elements per Chip :

1

Channel Type :

N

Maximum Gate Threshold Voltage (V) :

4

Maximum IDSS (uA) :

1

PCB changed :

3