DIT100N10

Manufacturer :

Diotec Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package Length :

10.1

Channel Mode :

Enhancement

Channel Type :

N

Supplier Package :

TO-220AB

PCB changed :

3

Maximum Drain Source Resistance (mOhm) :

13@10V

Maximum IDSS (uA) :

1

Maximum Gate Source Leakage Current (nA) :

100

Typical Turn-Off Delay Time (ns) :

40

Packaging :

Tube

Configuration :

Single

Maximum Continuous Drain Current (A) :

100

Maximum Operating Temperature (°C) :

175

Automotive :

No

SVHC :

yes

Typical Rise Time (ns) :

50

Maximum Gate Source Voltage (V) :

±20

ECCN (US) :

EAR99

Pin Count :

3

Typical Turn-On Delay Time (ns) :

15

Tab :

Tab

PPAP :

No

Maximum Drain Source Voltage (V) :

100

Maximum Power Dissipation (mW) :

200000

HTS :

8541.29.00.95

Minimum Operating Temperature (°C) :

-55

Typical Gate Charge @ 10V (nC) :

85

Package Width :

4.5

Supplier Temperature Grade :

COMMERCIAL

Typical Gate Charge @ Vgs (nC) :

85@10V

Mounting :

Through Hole

Package Height :

8.7

Category :

Power MOSFET

Typical Input Capacitance @ Vds (pF) :

4800@50V

EU RoHS :

Compliant with Exemption

Maximum Gate Threshold Voltage (V) :

4

Number of Elements per Chip :

1

Typical Fall Time (ns) :

55