DDTD122TC-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2008

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT IN BIAS RESISTOR

Pin Count :

3

hFE Min :

56

Polarity :

NPN

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 5mA 5V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA ICBO

Max Breakdown Voltage :

50V

Max Power Dissipation :

200mW

Weight :

7.994566mg

Number of Terminations :

3

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

Element Configuration :

Single

Continuous Collector Current :

500mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Mount :

Surface Mount

Number of Pins :

3

Frequency - Transition :

200MHz

Min Operating Temperature :

-55°C

Height :

1mm

Emitter Base Voltage (VEBO) :

5V

Length :

3.05mm

Mounting Type :

Surface Mount

Resistor - Base (R1) :

220 Ω

Transition Frequency :

200MHz

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

40V

Terminal Form :

Gull wing

Voltage - Rated DC :

50V

Max Collector Current :

500mA

Terminal Finish :

Matte Tin (Sn)

Width :

1.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Terminal Position :

Dual

Current Rating :

500mA

Collector Emitter Breakdown Voltage :

50V