DCP69-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

19 Weeks

Weight :

7.994566mg

Max Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA 1V

Collector Emitter Voltage (VCEO) :

500mV

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2007

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Elements :

1

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Power - Max :

1W

Length :

6.5mm

Packaging :

Tape and Reel (TR)

Transition Frequency :

200MHz

Element Configuration :

Single

Max Collector Current :

1A

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

20V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 100mA, 1A

Height :

1.6mm

Pbfree Code :

yes

Package / Case :

TO-261-4, TO-261AA

Number of Pins :

4

Collector Base Voltage (VCBO) :

-25V

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

200MHz

Pin Count :

4

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

-500mV

Peak Reflow Temperature (Cel) :

260

Base Part Number :

DCP69

Radiation Hardening :

No

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-5V

Width :

3.5mm

Max Power Dissipation :

1W