D45VH10G

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Mfr.Part #
D45VH10G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 80V 15A TO220
Stock
16,695
In Stock :
16,695

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
4.535924g
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
15A
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
50MHz
Transistor Element Material :
SILICON
Height :
15.75mm
Packaging :
Tube
Power Dissipation :
83W
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 4A 1V
REACH SVHC :
No SVHC
Polarity/Channel Type :
PNP
Number of Terminations :
3
Contact Plating :
Tin
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
JEDEC-95 Code :
TO-220AB
Published :
2005
Voltage - Rated DC :
-80V
Emitter Base Voltage (VEBO) :
7V
Collector Base Voltage (VCBO) :
80V
Gain Bandwidth Product :
50MHz
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
83W
Transistor Application :
SWITCHING
hFE Min :
35
Factory Lead Time :
6 Weeks
Mounting Type :
Through Hole
ECCN Code :
EAR99
Length :
10.28mm
Pin Count :
3
Transistor Type :
PNP
Radiation Hardening :
No
Current Rating :
-15A
Collector Emitter Voltage (VCEO) :
80V
JESD-609 Code :
e3
Case Connection :
COLLECTOR
Number of Pins :
3
Collector Emitter Saturation Voltage :
1.5V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
40
Vce Saturation (Max) @ Ib, Ic :
1V @ 800mA, 8A
Frequency :
50MHz
Collector Emitter Breakdown Voltage :
80V
Width :
4.82mm
Package / Case :
TO-220-3
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single onsemi D45VH10G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, D45VH10G pinout, D45VH10G datasheet PDF, D45VH10G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi D45VH10G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi D45VH10G


PNP -55°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

D45VH10G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 4A 1V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1V @ 800mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -15A.In the part, the transition frequency is 50MHz.A maximum collector current of 15A volts can be achieved.

D45VH10G Features


the DC current gain for this device is 20 @ 4A 1V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1V @ 800mA, 8A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 50MHz


D45VH10G Applications


There are a lot of ON Semiconductor
D45VH10G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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