D45VH10G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Gain Bandwidth Product :

50MHz

Lead Free :

Lead Free

Number of Elements :

1

Collector Emitter Breakdown Voltage :

80V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Emitter Base Voltage (VEBO) :

7V

Packaging :

Tube

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 1V

Collector Emitter Saturation Voltage :

1.5V

Max Power Dissipation :

83W

Pbfree Code :

yes

Frequency :

50MHz

Contact Plating :

Tin

Polarity/Channel Type :

PNP

Pin Count :

3

Transistor Application :

SWITCHING

Weight :

4.535924g

Published :

2005

Power Dissipation :

83W

Factory Lead Time :

6 Weeks

Current Rating :

-15A

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

1V @ 800mA, 8A

Transistor Type :

PNP

Width :

4.82mm

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Package / Case :

TO-220-3

Collector Base Voltage (VCBO) :

80V

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

-80V

Height :

15.75mm

hFE Min :

35

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

50MHz

Peak Reflow Temperature (Cel) :

260

Length :

10.28mm

Element Configuration :

Single

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Max Collector Current :

15A

ECCN Code :

EAR99

Surface Mount :

No

Number of Pins :

3