CPC5602CTR
- Mfr.Part #
- CPC5602CTR
- Manufacturer
- Littelfuse
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 350V 5MA SOT-223
- Stock
- 12,890
- In Stock :
- 12,890
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 14 Ω
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.5W
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 4
- Series :
- --
- Transistor Application :
- SWITCHING
- Input Capacitance :
- 300pF
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Drain to Source Resistance :
- 14Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- -0.35V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 2.5W (Ta)
- HTS Code :
- 8541.29.00.95
- Published :
- 2011
- Current - Continuous Drain (Id) @ 25°C :
- 5mA Ta
- Product Category :
- MOSFET
- Reach Compliance Code :
- Unknown
- Gate to Source Voltage (Vgs) :
- 20V
- Maximum Operating Temperature :
- + 85 C
- Continuous Drain Current (ID) :
- 5mA
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Subcategory :
- MOSFETs
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 6 Weeks
- FET Type :
- N-Channel
- Operating Mode :
- Depletion Mode
- Terminal Finish :
- Matte Tin (Sn)
- RoHS :
- Compliant
- Base Product Number :
- CPC5602
- Operating Temperature :
- -40°C~85°C TA
- Pin Count :
- 4
- Product :
- PCB Mount
- Voltage Rating (DC) :
- 350 V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- Depletion Mode
- Power Dissipation-Max :
- 2.5W Ta
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Manufacturer :
- IXYS
- ECCN Code :
- EAR99
- Mounting Style :
- SMD/SMT
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 300 pF @ 0 V
- Min Operating Temperature :
- -40°C
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PDSO-G4
- Rds On Max :
- 14 Ω
- Pbfree Code :
- yes
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Weight :
- 250.212891mg
- Vgs(th) (Max) @ Id :
- --
- Tradename :
- Clare
- DS Breakdown Voltage-Min :
- 350 V
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 40 C
- Drain to Source Voltage (Vdss) :
- 350V
- Channel Mode :
- Depletion
- Brand :
- IXYS Integrated Circuits
- Voltage - Rated DC :
- 350V
- Power Dissipation-Max (Abs) :
- 2.5 W
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 2.5 W
- Max Operating Temperature :
- 85°C
- Rds On (Max) @ Id, Vgs :
- 14Ohm @ 50mA, 350mV
- Supplier Device Package :
- SOT-223
- Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Schedule B :
- 8541290080
- Drain to Source Breakdown Voltage :
- 350V
- Resistance :
- 14Ohm
- Transistor Type :
- 1 N-Channel
- Package / Case :
- TO-261-4, TO-261AA
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Current Rating :
- 5mA
- Datasheets
- CPC5602CTR

N-Channel Tape & Reel (TR) 14Ohm @ 50mA, 350mV ±20V 300 pF @ 0 V 350V TO-261-4, TO-261AA
CPC5602CTR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 300 pF @ 0 V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 5mA.With a drain-source breakdown voltage of 350V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 350V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 14Ohm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 350 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 350V.Using drive voltage (-0.35V) reduces this device's overall power consumption.
CPC5602CTR Features
a continuous drain current (ID) of 5mA
a drain-to-source breakdown voltage of 350V voltage
single MOSFETs transistor is 14Ohm
a 350V drain to source voltage (Vdss)
CPC5602CTR Applications
There are a lot of IXYS Integrated Circuits Division
CPC5602CTR applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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