CP767V-2N3467-CT
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- Mfr.Part #
- CP767V-2N3467-CT
- Manufacturer
- Central Semiconductor
- Package / Case
- Die
- Datasheet
- Download
- Description
- TRANSISTOR
- Stock
- 22,856
- In Stock ：
- 22,856
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Last Time Buy
- Current - Collector (Ic) (Max) :
- 1 A
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Package / Case :
- Die
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- Die
- Package :
- Bulk
- Power - Max :
- 1 W
- Manufacturer :
- Carlo Gavazzi
- Frequency - Transition :
- 175MHz
- Series :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A, 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100mA, 1A
- Base Product Number :
- CP767V
- Datasheets
- CP767V-2N3467-CT
PNP -65°C ~ 150°C (TJ) 100nA Die Surface Mount
CP767V-2N3467-CT Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 1A, 5V.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Supplier package Die contains the product.The device has a 40 V maximal voltage - Collector Emitter Breakdown.
CP767V-2N3467-CT Features
the DC current gain for this device is 40 @ 1A, 5V
the vce saturation(Max) is 1V @ 100mA, 1A
the supplier device package of Die
CP767V-2N3467-CT Applications
There are a lot of Central
CP767V-2N3467-CT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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