CP647-MJ11015-WR

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Mfr.Part #
CP647-MJ11015-WR
Manufacturer
Central Semiconductor
Package / Case
Die
Datasheet
Download
Description
TRANS PNP DARL 120V 30A DIE
Stock
35,087
In Stock :
35,087

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
30A
Packaging :
Tray
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 30A 5V
Operating Temperature :
-65°C~150°C TJ
Voltage - Collector Emitter Breakdown (Max) :
120V
Mounting Type :
Surface Mount
RoHS Status :
Non-RoHS Compliant
Current - Collector Cutoff (Max) :
1mA
Transistor Type :
PNP - Darlington
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
Die
Vce Saturation (Max) @ Ib, Ic :
4V @ 300mA, 30A
Datasheets
CP647-MJ11015-WR
Introducing Transistors - Bipolar (BJT) - Single Central Semiconductor CP647-MJ11015-WR from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:Die, CP647-MJ11015-WR pinout, CP647-MJ11015-WR datasheet PDF, CP647-MJ11015-WR amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor CP647-MJ11015-WR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP - Darlington -65°C~150°C TJ 1mA Die Tray Surface Mount

CP647-MJ11015-WR Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 30A 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 300mA, 30A.This device displays a 120V maximum voltage - Collector Emitter Breakdown.

CP647-MJ11015-WR Features


the DC current gain for this device is 200 @ 30A 5V
the vce saturation(Max) is 4V @ 300mA, 30A


CP647-MJ11015-WR Applications


There are a lot of Central Semiconductor Corp
CP647-MJ11015-WR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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