CP611-2N5955-CT
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- Mfr.Part #
- CP611-2N5955-CT
- Manufacturer
- Central Semiconductor
- Package / Case
- Die
- Datasheet
- Download
- Description
- TRANSISTOR
- Stock
- 42,357
- In Stock ：
- 42,357
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- -
- Transistor Type :
- PNP
- Frequency - Transition :
- 5MHz
- Supplier Device Package :
- Die
- Product Status :
- Last Time Buy
- Package / Case :
- Die
- Power - Max :
- 40 W
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 1.2A, 6A
- Package :
- Bulk
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 2.5A, 4V
- Current - Collector (Ic) (Max) :
- 6 A
- Current - Collector Cutoff (Max) :
- 1mA
- Base Product Number :
- CP611
- Datasheets
- CP611-2N5955-CT
PNP -65°C ~ 150°C (TJ) 1mA Die Surface Mount
CP611-2N5955-CT Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20 @ 2.5A, 4V.When VCE saturation is 2V @ 1.2A, 6A, transistor means Ic has reached transistors maximum value (saturated).Supplier package Die contains the product.The device has a 60 V maximal voltage - Collector Emitter Breakdown.
CP611-2N5955-CT Features
the DC current gain for this device is 20 @ 2.5A, 4V
the vce saturation(Max) is 2V @ 1.2A, 6A
the supplier device package of Die
CP611-2N5955-CT Applications
There are a lot of Central
CP611-2N5955-CT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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