CP305-2N3019-CT
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- Mfr.Part #
- CP305-2N3019-CT
- Manufacturer
- Central Semiconductor
- Package / Case
- Die
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A DIE 1=400
- Stock
- 33,821
- In Stock ：
- 33,821
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 100MHz
- Packaging :
- Tray
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Package / Case :
- Die
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 500mV
- Published :
- 2017
- Current - Collector (Ic) (Max) :
- 1A
- Supplier Device Package :
- Die
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Datasheets
- CP305-2N3019-CT
NPN -65°C~150°C TJ 10nA ICBO Die Tray Surface Mount
CP305-2N3019-CT Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Die is the supplier device package for this product.This device displays a 80V maximum voltage - Collector Emitter Breakdown.During maximum operation, collector current can be as low as 1A volts.
CP305-2N3019-CT Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the supplier device package of Die
CP305-2N3019-CT Applications
There are a lot of Central Semiconductor Corp
CP305-2N3019-CT applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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