CMUT5551E TR
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- Mfr.Part #
- CMUT5551E TR
- Manufacturer
- Central Semiconductor
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- TRANS NPN 220V 0.6A SOT523
- Stock
- 45,602
- In Stock ：
- 45,602
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max (Abs) :
- 0.25W
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SOT-523
- Current - Collector (Ic) (Max) :
- 600mA
- Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- NPN
- Frequency - Transition :
- 300MHz
- Published :
- 2017
- Surface Mount :
- yes
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50nA
- Reach Compliance Code :
- Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 10mA 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 220V
- Power - Max :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 5mA, 50mA
- Datasheets
- CMUT5551E TR
NPN -65°C~150°C TJ 50nA NPN SOT-523 Tape & Reel (TR) Surface Mount
CMUT5551E TR Overview
This device has a DC current gain of 120 @ 10mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 100MHz.Detection of Collector Emitter Breakdown at 220V maximal voltage is present.
CMUT5551E TR Features
the DC current gain for this device is 120 @ 10mA 5V
the vce saturation(Max) is 100mV @ 5mA, 50mA
a transition frequency of 100MHz
CMUT5551E TR Applications
There are a lot of Central Semiconductor Corp
CMUT5551E TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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