CMLDM7003T TR

Manufacturer :

Central Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Flat

Vgs(th) (Max) @ Id :

1.2V @ 250µA

FET Feature :

Standard

Factory Lead Time :

24 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

280mA

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 50mA, 5V

Power - Max :

350mW

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Drain-source On Resistance-Max :

2.3Ohm

Drain to Source Voltage (Vdss) :

50V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

0.76nC @ 4.5V

Transistor Element Material :

SILICON

Number of Terminations :

6

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

0.35W

Surface Mount :

yes

Feedback Cap-Max (Crss) :

5 pF

Package / Case :

SOT-563, SOT-666

Number of Elements :

2

DS Breakdown Voltage-Min :

50V

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

0.28A

JESD-30 Code :

R-PDSO-F6

Published :

2016