BZB784-C3V6,115

Manufacturer :

NXP Semiconductors

Product Category :

Diodes - Zener - Arrays

Published :

2007

Test Current :

5mA

Max Power Dissipation :

180mW

Diode Type :

ZENER DIODE

Diode Element Material :

SILICON

Number of Elements :

2

Voltage Tolerance :

5%

Tolerance :

±5%

HTS Code :

8541.10.00.50

Radiation Hardening :

No

Package / Case :

SC-70, SOT-323

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Number of Pins :

70

Mount :

Surface Mount

Terminal Form :

Gull wing

Reference Voltage :

3.6V

Factory Lead Time :

4 Weeks

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Power Dissipation :

350mW

Impedance :

90Ohm

Zener Voltage :

3.6V

Terminal Position :

Dual

Element Configuration :

Common Anode

Polarity :

Unidirectional

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

Current - Reverse Leakage @ Vr :

5μA @ 1V

ECCN Code :

EAR99

Configuration :

1 Pair Common Anode

Max Reverse Leakage Current :

5μA

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

JESD-609 Code :

e3

ESD Protection :

yes

Impedance-Max :

90Ohm

Voltage Tol-Max :

5%