BZB784-C2V4,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Max Reverse Leakage Current :

50μA

Diode Element Material :

SILICON

Power Dissipation :

350mW

ECCN Code :

EAR99

Current - Reverse Leakage @ Vr :

50μA @ 1V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Tolerance :

±5%

Radiation Hardening :

No

Voltage Tol-Max :

5%

Published :

2007

Polarity :

Unidirectional

JESD-609 Code :

e3

Terminal Position :

Dual

ESD Protection :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

JESD-30 Code :

R-PDSO-G3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Test Current :

5mA

Contact Plating :

Tin

Max Operating Temperature :

150°C

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Terminal Form :

Gull wing

Package / Case :

SC-70, SOT-323

Zener Voltage :

2.4V

Voltage Tolerance :

5%

Base Part Number :

BZB784-C2V4

Packaging :

Tape and Reel (TR)

Number of Pins :

70

Diode Type :

ZENER DIODE

Reference Voltage :

2.4V

Mount :

Surface Mount

Max Power Dissipation :

180mW

Factory Lead Time :

4 Weeks

HTS Code :

8541.10.00.50

Element Configuration :

Common Anode

Impedance :

100Ohm

Min Operating Temperature :

-65°C

Impedance-Max :

100Ohm

Configuration :

1 Pair Common Anode

Number of Terminations :

3