BZB784-C2V4,115

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Contact Plating :

Tin

Power Dissipation :

350mW

Factory Lead Time :

4 Weeks

Published :

2007

Voltage Tol-Max :

5%

Polarity :

Unidirectional

Min Operating Temperature :

-65°C

Pin Count :

3

JESD-30 Code :

R-PDSO-G3

Diode Element Material :

SILICON

Zener Voltage :

2.4V

Number of Elements :

2

HTS Code :

8541.10.00.50

Radiation Hardening :

No

Configuration :

1 Pair Common Anode

Number of Pins :

70

Max Power Dissipation :

180mW

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Type :

ZENER DIODE

Impedance :

100Ohm

Voltage - Forward (Vf) (Max) @ If :

900mV @ 10mA

Terminal Position :

Dual

Voltage Tolerance :

5%

Number of Terminations :

3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Test Current :

5mA

JESD-609 Code :

e3

Impedance-Max :

100Ohm

RoHS Status :

ROHS3 Compliant

Reference Voltage :

2.4V

Element Configuration :

Common Anode

ESD Protection :

yes

Base Part Number :

BZB784-C2V4

ECCN Code :

EAR99

Tolerance :

±5%

Package / Case :

SC-70, SOT-323

Max Reverse Leakage Current :

50μA

Max Operating Temperature :

150°C

Current - Reverse Leakage @ Vr :

50μA @ 1V