BVSS84LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 5V

Vgs (Max) :

±20V

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

3

ECCN Code :

EAR99

Number of Channels :

1

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-50V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

225mW Ta

Packaging :

Tape and Reel (TR)

Weight :

1.437803g

Rise Time :

9.7ns

Turn-Off Delay Time :

12 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

130mA Ta

Pbfree Code :

yes

Pin Count :

3

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Halogen Free :

Halogen Free

Fall Time (Typ) :

1.7 ns

FET Type :

P-Channel

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

5V

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

3.6 ns

Lead Free :

Lead Free

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Published :

2004

Surface Mount :

yes

Power Dissipation :

225mW

Drain to Source Voltage (Vdss) :

50V

Continuous Drain Current (ID) :

130mA