BVSS84LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

-50V

Vgs (Max) :

±20V

Fall Time (Typ) :

1.7 ns

Time@Peak Reflow Temperature-Max (s) :

10

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

225mW

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 5V

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

FET Type :

P-Channel

Number of Terminations :

3

Terminal Form :

Gull wing

Rise Time :

9.7ns

Surface Mount :

yes

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Radiation Hardening :

No

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn-Off Delay Time :

12 ns

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

225mW Ta

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

130mA

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

50V

ECCN Code :

EAR99

Turn On Delay Time :

3.6 ns

Published :

2004

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

130mA Ta

Gate Charge (Qg) (Max) @ Vgs :

2.2nC @ 10V

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Weight :

1.437803g

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Halogen Free :

Halogen Free

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V