BVSS123LT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Turn On Delay Time :

20 ns

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.8V @ 1mA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Power Dissipation :

225mW

Number of Pins :

3

Published :

2001

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

FET Type :

N-Channel

Continuous Drain Current (ID) :

170mA

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Turn-Off Delay Time :

40 ns

Number of Terminations :

3

Terminal Position :

Dual

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

225mW Ta

Halogen Free :

Halogen Free

Pbfree Code :

yes

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Drain-source On Resistance-Max :

6Ohm

Vgs (Max) :

±20V